There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction ...
The University of Warwick has secured major new funding to boost the UK’s ability to test the reliability of advanced ...
The development of wide bandgap silicon carbide (SiC) compound semiconductors has proved to be extremely beneficial for power conversion applications. Capable of switching at significantly higher ...
Thanks to their performance characteristics [1], [2], silicon carbide (SiC) power devices are establishing themselves on the market as valid replacements for MOSFETs and IGBTs based on silicon ...
Navitas Semiconductor has announced a new level of reliability for its SiC MOSFETs to meet the requirements of the most demanding automotive and industrial applications. These new ‘AEC-Plus’ 650-V and ...
Dig into the details of just how reliable are some GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies are for S-Band and X-Band. August 14th, 2019 - By: Wolfspeed, a ...
The University of Warwick has secured major new funding to boost the UK's ability to test the reliability of advanced ...
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