Scientists have identified a new type of defect as the most common source of disorder in on-surface synthesized graphene nanoribbons, a novel class of carbon-based materials that may prove extremely ...

Formation of defect-pairs in GaN under high-energy particle irradiation. Courtesy: S Chen Gallium nitride (GaN) is the world’s second-favourite semiconductor, present in devices ranging from ...

Researchers have discovered a novel way to manipulate defects in semiconductors. The study holds promising opportunities for novel forms of precision sensing, or the transfer of quantum information ...

Atomic vacancies are a type of point defect in a crystal lattice where one or more atoms are absent from their regular lattice positions. Although they might seem like simple imperfections, these ...

Researchers and industries have been using transmission electron microscopy (TEM) to study semiconductors' stacking and dislocation faults. This article considers the analysis of crystal structures.

Graphene nanoribbons (GNRs), narrow strips of single-layer graphene, have interesting physical, electrical, thermal, and optical properties because of the interplay between their crystal and ...

While bottom-up fabrication techniques now allow the synthesis of a broad range of graphene nanoribbons that feature well-defined edge geometries, widths, and heteroatom incorporations, the question ...